 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CH858BPT CURRENT 0.1 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) (3) MARKING * HFE(Q):J18 * HFE(R):3K * HFE(S):J19 (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) 2 .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note.2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a aX5X0.6mm ceramic board 2004-03 CONDITIONS open emitter open base open collector - - - - - - MIN. MAX. -30 -30 -5 -0.1 0.2 0.35 +150 150 UNIT V V V A W C C storage temperature junction temperature -55 - RATING CHARACTERISTIC ( CH858BPT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL I CBO BVCBO BVCEO BVEBO hFE VCEsat VBE(on) Cob fT Note 1. Pulse test: t p 300 s; 0.02. 2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800 PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = 30 V MIN. - -30 -30 -5 125 - - -0.6 - - Typ. - - - - - - - - 4.5 200 MAX. 15 - - - UNIT nA V V V collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-10mA IE =-1uA emitter-base breakdown voltage VCE /I C =-5V/-2 mA current transfer ratio DC IC = -10 mA ; I B = -0.5 mA collector-emitter saturation IC = -100 mA ; I B = -5 mA voltage base-emitter satur ation voltage collector output capacitance transition frequency IC = -10 mA;VCE = -5.0 V IE = 0; VCB = -10V ; f = 1 MH z IE = 20 mA; VCE = - 5 V ; f = 100 MHz 800 -300 mV -650 mV V -0.75 - - pF MHz RATING CHARACTERISTIC CURVES ( CH858BPT ) fig1.Grounded emmitter output characteristics (1) 100 COLLECTOR CURRENT : Ic (mA) 80 60 40 20 iB=0mA 0 0 0.7 0.5 0.4 0.3 0.2 0.1 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25 C 2.0 O fig2.Grounded emmitter output characteristics (2) COLLECTOR CURRENT : Ic (mA) 10 50 0.6 Ta=25 C O 8.0 6.0 4.0 2.0 0 0 45 40 35 30 25 20 15 10 5 IB=0uA 1.0 COLLECTOR-EMITTER VOLTAGE : V (V) CE 2.0 RATING CHARACTERISTIC CURVES ( CH858BPT ) fig3.DCcurrent gain VS. collector current (1) 500 Ta=25 C VCE=10V hFE-DC CURRENT GAIN hFE-DC CURRENT GAIN 100 1V 5V 100 Ta=125 C O Ta=25 O C Ta=-55 C O O fig4.DCcurrent gain VS. collector current (2) 500 Ta=25 C O 10 5 0.1 100 10 1 I C - COLLECTOR CURRENT (mA) 1000 10 5 0.1 10 100 1 I C - COLL ECTOR CURRENT (mA) 1000 VCE(SAT)COLLECTOR EMITTER SATURATION fig5.AC current gain VS. collector current 500 hFE-AC CURRENT GAIN Ta=25 C VCE=5V f=1KHZ O fig6.Collector-emitter saturation voltage VS. collector current 0.3 VOLTAGE (V) Ta=25 C IC/IB=10 O 100 0.2 0.1 10 5 0.01 0 0.1 0.1 1.0 10 100 I C - COLLECTO R CURRENT (mA) 10 1.0 I C - COLLECTO R CURRENT (mA) 100 VBE(Sat)BASE EMITTER SATURATION VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VBE(ON)BASE EMITTER VOLTAGE (V) fig7.Bass-emitter saturation voltage VS. collector current Ta=25 C IC/IB=10 O fig8.Grounded emitter propagation characteristics 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 Ta=25 C VCE=10V O 1.0 10 I C - COLLECTOR CURRENT (mA) 100 1.0 10 I C - COLLECTOR CURRENT (mA) 100 RATING CHARACTERISTIC CURVES ( CH858BPT ) fig9.Input/output capacitance VS. voltage 100 CAPAITANCE(pF) Ta=25 C f=1MHZ O ft-CURRENT GAIN-BANDWIDTH PRODUCT (MHZ) fig10.Gain bandwidth product VS. collector current 1000 Ta=25 C VCE=5V O Cib 10 Cob 100 1 0.5 1 10 REVERSE BIAS VOLTAGE(V) 50 10 0.5 1 10 100 500 Ic-COLLECTOR CURRENT (mA) |
Price & Availability of CH858BPT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |